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| 2SK2925(L), 2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-549 Target Specification 1st. Edition Features * Low on-resistance R DS = 0.060 typ. * High speed switching * 4V gate drive device can be driven from 5V source Outline 2SK2925(L), 2SK2925(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 60 20 10 40 10 10 8.5 20 150 -55 to +150 Unit V V A A A A mJ W C C EAR* Pch* Tch Tstg 2 2SK2925(L), 2SK2925(S) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) Min 60 20 -- -- 1.5 -- -- 5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.060 0.095 8 350 190 70 10 55 60 70 0.9 50 Max -- -- 10 10 2.5 0.080 0.160 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 10A, VGS = 0 I F = 10A, VGS = 0 diF/ dt = 50A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 5A, VGS = 10V*1 I D = 5A, VGS = 4V*1 I D = 5A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz I D = 5A, VGS = 10V RL = 6 Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test t d(on) tr t d(off) tf VDF t rr 3 2SK2925(L), 2SK2925(S) Main Characteristics 4 2SK2925(L), 2SK2925(S) Package Dimentions Unit: mm 5 2SK2925(L), 2SK2925(S) When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 6 |
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